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| inchange semiconductor product specification silicon npn power transistors BU1507AX description ? with to-220f package ? high voltage ? high speed switching applications ? for use in horizontal def lection circuits of colour tv receivers and computer monitors. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7.5 v i c collector current 8 a i cm collector current (peak) 15 a i b base current 4 a i bm base current (peak) 6 a p t total power dissipation t c =25 ?? 45 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU1507AX characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7.5 13.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0;l=25mh 700 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.1 v i ces collector cut-off current v ce =rated;v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 17 h fe-2 dc current gain i c =4.0a ; v ce =5v 5.0 7.0 9.0 c c collector output capacitance i e =0;f=1mhz;v cb =10v 68 pf inchange semiconductor product specification 3 silicon npn power transistors BU1507AX package outline fig.2 outline dimensions |
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